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    • E-mail : mdkim@cnu.ac.kr
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학사 : 동국대학교 
석사 : 동국대학교
박사 : 동국대학교 
1994 - 1995 : 한국과학기술연구원 박사 후 연구원
1995 - 2002 : 삼성전자 책임연구원
2002 - 2003 : 한국표준과학연구원 선임연구원 
2003 - 현재 : 충남대학교 조교수 - 부교수

반도체 나노 광전자소자

Growth and Characterization of HgCdTe/CdTe by Using Molecular Beam Epitaxy

- "Photoluminescence Study of InAs Quantum Dots with a Bimodal Size Distribution" J. Korean Physical Society, 42(5), May 2003, 686-690.

- "Device Characteristics of Self-Assembled InAs/GaAs Quantum Dot Infrared Photodetectors", J. Korean Physical Society, 42(3), March 2003, 418-422.

- "Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature", Appl. Phys. Lett. 82(4), 553(2003). -- selected for the February 3, 2003 issue of the Virtual Journal of Nanoscale Science & Technology.

- "Interband transition studies of one-side modulaion-doped AlGaAs/InGaAs/GaAs asymmetric step quantum wells", Materials Research Bulletin 37(October 3, 2002), 2035-2041.

- "Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots", J Crystal Growth, 241, 63(May 2002).

- "Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces", J. Appl. Phys. 91(9), 5657(May 2002).

- "Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlGaAs/GaAs heterostructures", J. Appl. Phys. 91(8), 5195(April 2002).

- "Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures", Appl. Phys. Lett. 79(1), 33(2001)

- "1.55 ㎛ Wavelength Strain-Compensated InGaAs/InAlAs Elecroabsorption Modulators with High Extinction Ratio and Low Polarization Dependent Loss", Jpn. J. Appl. Phys. 40, 3120(2001).

- "Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures", J. Crystal Growth 227-228, 1162(2001).

- "Deep Level defects of InAs quantum dots grown on GaAs by Molecular Beam Epitaxy", J. Crystal Growth 227-228, 1057(2001).

- "Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor", Jpn. J. Appl. Phys. Vol. 40(2001), pp. 2801-2803.

- "Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers", Solid State Communication 118, 465(May 2001)

- "The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlGaAs/InGaAs/GaAs asymmetric single quantum wells", Applied Surface Science 177, 1(2001).

- "Dark current reduction in APD with BCB passivation", ELECTRONICS LETTERS, 37, 455(2001).

"Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer", Journal of Applied Physics, 89, 2649(2001).

- "Existence of a CuAu-I-type orderd structure in lattice-mismatched InGaAs/InAlAs multiple quantum wells", Journal of Applied Physics,89,2503(2001).